• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method for producing a high dispersed silicon dioxide, including the high-temperature decomposition of silicon tetrachloride and the reduction of the liberated elemental chlorine with hydrogen, is introduced into the cooling section of the reaction products at 500–700 ° C through a single pipe, which is not enough, to move the sedimentation of the target product on a single pipe, hydrogen is fed in a mixture with an inert gas in an amount that provides the hydrogen content in the exhaust gas of 1.6-2.0%, at an inert gas feed rate of 20 -200. CO i
    公开号:SU1170966A3
    申请号:SU802911997
    申请日:1980-04-22
    公开日:1985-07-30
    发明作者:Шмид Йозеф；Ланге Людвиг；Клебе Ханс；Шутте Дитер
    申请人:Дегусса Аг (Фирма)；
    IPC主号:
    专利说明:

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    This invention relates to methods; obtaining pyrogenic highly dispersed silicon dioxide.
    The aim of the invention is to simplify the process and prevent the desired product from settling on a single pipe.
    The method is carried out as follows.
    The evaporated silicon halogen compound is combusted in the presence of hydrogen, while SiO and elemental halogen are shed, which turns into hydrogen. Hydrogen during the cooling of the reaction products is additionally introduced with gaseous hydrogen and oxygen in the outgoing gaseous reaction products, with oxygen hydrogen is mixed with an inert gas and injected into the cooling section with a single pipe, hydrogen is added so much that its amount in the exhaust gas is 1.6-2.0% by volume,
    A multi-bore pipe may be used as the inlet pipe 25. The supply of a mixture of hydrogen and inert gas at a speed of 20,200 m / h can be carried out throughout the entire cooling section in several, 30 for example, 3-6 places, with one single tube being used at each place.
    In a preferred embodiment of the invention, a mixture of water and .35 inert gas is introduced into the cooling section at 500-700 ° C, in particular between 550 and
    Noble gases, carbon dioxide gas or, in particular, nitrogen can be used as inert gas. It can be used in an amount of 20-200, preferably 50150 m3 / h.
    The starting material 45 for the preparation of other metal oxides or metalloids can be used evaporating halogen compounds of aluminum metals or titanium or metalloids (metals of the 2nd type) 50 silicon or germanium.
    To obtain a mixture of oxides of various elements, a mixture of evaporating halogen compounds of the respective elements can be used as a starting material.
    In a preferred embodiment, the corresponding metal chloride or metalloid chloride can be used as the halogen compound as the starting material. But organic halogen compounds can also be used. Thus, SiiiCl can be used to produce silicon dioxide. , ,,, 31СЦ, CHj-SiClj, (,, (CHj,) - SiCl, CHg-CHjSiCIj or (CHj-CH) SiClj.
    By simultaneously supplying an inert gas with hydrogen, the temperature at the entry point can be influenced, so that with changes in the flow rate, transfer of the entry point can be avoided. Thus, a mixture of hydrogen and inert gas can be introduced at a place where the temperature of the off-gas of the reaction products is so high that hydrogen is immediately burned with oxygen without the occurrence of this unwanted combustion. The advantage is that, due to the supply of inert gas, the tube for the introduction of hydrogen is cooled, and thus it becomes more durable and can be damped by corrosion. By supplying an inert gas, the deposition of a metal oxide or metalloid on the inlet pipe is additionally prevented.
    Example 1. 2000 kg. LUCS, 648 hydrogen and 1900 air are fed to the aerosol burner, as well as 22 m / h of hydrogen through the casing to release the burner (limestone principle of operation), and get 705 kg / h of highly dispersed silicic acid with a specific surface of 200 № / 4. 7.5% of the calculated amount of hydrogen chloride is detected as free chlorine in the reaction gas.
    70 of hydrogen and 20–200 m / h of inert gas are introduced into the cooling section at 500–700 ° C through a single pipe.
    The drawing shows schematically a pipe for injecting a mixture of hydrogen and inert gas.
    The introduction pipe 1 is fixed in the wall of the cooling section 2 in such a way that its length corresponds to the diameter of the cooling section. The inlet pipe 1 has two rows of holes 3 on the wall. A mixture of hydrogen and nitrogen is fed into the inlet pipe 1 through a pipe that is fixed to the flange 4 and enters the cooling section through the hole 3. Then the fine SiOy obtained is separated from the reaction gas Hydrogen in the combustible gas mixture 648 Shirt H for the release of burner inlet22 Addition of hydrogen 70 Total hydrogen 740 Nitrogen 20-200 View to that according to the invention can be inexpensively rabotyt starting materials. Example 2. The process is carried out analogously to example 1, where after the chemical transformation is carried out, 70 hydrogen and 20 m / h of inert gas are introduced into the cooling section at 500 ° C via a single pipe. The amount of hydrogen in the exhaust gas is 1.6 vol.%. Example 3. The process is carried out similarly to Example 1, where, after a chemical conversion is carried out, 70 m / h of hydrogen and 115 m / h of inert gas are introduced into the cooling section with a single pipe. The amount of hydrogen in the exhaust gas is 1.75 vol.%., Example 4. The process is carried out as in Example 1, and after carrying out a chemical transformation, 200 m / h of inert gas is introduced into the cooling section at 70 ° C via a single pipe. The amount of hydrogen in the exhaust gas is 2 ab.%.
    权利要求:
    Claims (1)
    [1]
    METHOD FOR PRODUCING HIGH-PERFORMANCE SILICON DIOXIDE, including high-temperature decomposition of silicon tetrachloride and reduction of liberated elemental chlorine by hydrogen introduced into a cooling section of the reaction products at 500-700 ° C through a single pipe, characterized in that, in order to simplify the method and prevent the target product from settling single pipe, hydrogen is fed in a mixture with inert gas in an amount providing a hydrogen content of 1.6-2.0 vol.% in the off-gas at an inert gas feed rate of 20-200 m 3 / h.
    SU ", 1170966
    1 1170966 2
    类似技术:
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    CA1077677A|1980-05-20|Process for preparing sulfur dioxide from sulfur and oxygen
    US4208390A|1980-06-17|Process for the recovery of ammonia and sulphur dioxide from a contaminated ammonium salt of sulphuric acid
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    同族专利:
    公开号 | 公开日
    BR8003431A|1981-01-05|
    EP0021127A1|1981-01-07|
    EP0021127B1|1984-10-03|
    DD151295A5|1981-10-14|
    DE2923182A1|1980-12-18|
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    DE3069343D1|1984-11-08|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    RU2468993C1|2011-03-30|2012-12-10|Открытое Акционерное Общество "Российский научно-исследовательский и проектный институт титана и магния" |Method of recycling waste gases, formed in process of obtaining pyrogenic silicon dioxide by high-temperature hydrolysis of silicon chlorides|NL113022C|1957-11-20|
    DE1244125B|1964-08-01|1967-07-13|Degussa|Process for the production of finely divided oxides|
    US3416890A|1965-12-16|1968-12-17|Owens Illinois Inc|Process of producing oxides of metals and metalloids|
    DE2005010B2|1970-02-04|1979-08-02|Bayer Ag, 5090 Leverkusen|Device for cooling and wet separation of hot reaction gases containing metal oxides|
    BE790704A|1971-10-28|1973-02-15|Degussa|PROCESS FOR THE MANUFACTURE OF OXIDES FINE|
    DE2533925C3|1975-07-30|1980-12-11|Degussa Ag, 6000 Frankfurt|Process for the production of finely divided oxides of metals and / or silicon|
    JPS5288573A|1976-01-21|1977-07-25|Kanegafuchi Chem Ind Co Ltd|Removal of chlorine in gas|
    DE2849851C3|1978-11-17|1981-11-05|Degussa Ag, 6000 Frankfurt|Process for the pyrogenic production of finely divided oxide of a metal and / or a metalloid|DE3101720C2|1981-01-21|1982-11-04|Degussa Ag, 6000 Frankfurt|Process for removing halogen from the reaction gases in the pyrogenic production of silicon dioxide|
    DE3203743C2|1982-02-04|1992-05-07|Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De|
    US5089248A|1990-05-14|1992-02-18|Masud Akhtar|Production of metallic oxides|
    AU9075191A|1990-11-13|1992-06-11|Cabot Corporation|A process and device for reducing free halogens in residual gasses|
    JPH04110808U|1991-03-08|1992-09-25|
    DE19624392A1|1996-06-19|1998-01-08|Degussa|Boron oxide-silica mixed oxide|
    US6083859A|1996-06-19|2000-07-04|Degussa-Huls Ag|Boron oxide-silicon dioxide mixed oxide|
    DE10135452A1|2001-07-20|2003-02-06|Degussa|Pyrogenically produced aluminum-silicon mixed oxides|
    US7662476B2|2008-06-13|2010-02-16|The Worthington Group of Tennessee, LLC|Metal surface-modified silica-titania composites and methods for forming the same|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE19792923182|DE2923182A1|1979-06-08|1979-06-08|METHOD FOR THE PYROGENIC PRODUCTION OF FINE-PARTICLE OXIDE OF A MATAL AND / OR A METALOID|
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